MC10E212 데이터 시트보기 (PDF) - ON Semiconductor

부품명

상세내역

제조사

MC10E212

5V ECL 3-Bit Scannable Registered Address Driver

ON Semiconductor 

MC10E212, MC100E212

100E SERIES PECL DC CHARACTERISTICS VCCx= 5.0 V; VEE= 0.0 V (Note 1)

0°C

25°C

85°C

Symbol

Characteristic

Min Typ Max Min Typ Max Min Typ Max Unit

IEE

Power Supply Current

80

96

80

96

92 110 mA

VOH

Output HIGH Voltage (Note 2)

3975 4050 4120 3975 4050 4120 3975 4050 4120 mV

VOL

Output LOW Voltage (Note 2)

3190 3295 3380 3190 3255 3380 3190 3260 3380 mV

VIH

Input HIGH Voltage

3835 4050 4120 3835 4120 4120 3835 4120 4120 mV

VIL

Input LOW Voltage

3190 3300 3525 3190 3525 3525 3190 3525 3525 mV

IIH

Input HIGH Current

IIL

Input LOW Current

150

150

150 μA

0.5 0.3

0.5 0.25

0.5 0.2

μA

NOTE: Devices are designed to meet the DC specifications shown in the above table, after thermal equilibrium has been established. The

circuit is in a test socket or mounted on a printed circuit board and transverse air flow greater than 500 lfpm is maintained.

1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.4 6V / −0.8 V.

2. Outputs are terminated through a 50 ohm resistor to VCC−2 volts.

100E SERIES NECL DC CHARACTERISTICS VCCx= 0.0 V; VEE= −5.0 V (Note 1)

0°C

25°C

85°C

Symbol

Characteristic

Min Typ Max Min Typ Max Min Typ Max Unit

IEE

Power Supply Current

80

96

80

96

92 110 mA

VOH

Output HIGH Voltage (Note 2)

−1025 −950 −880 −1025 −950 −880 −1025 −950 −880 mV

VOL

Output LOW Voltage (Note 2)

−1810 −1705 −1620 −1810 −1745 −1620 −1810 −1740 −1620 mV

VIH

Input HIGH Voltage

−1165 −950 −880 −1165 −880 −880 −1165 −880 −880 mV

VIL

Input LOW Voltage

−1810 −1700 −1475 −1810 −1475 −1475 −1810 −1475 −1475 mV

IIH

Input HIGH Current

150

150

150 μA

IIL

Input LOW Current

0.5 0.3

0.5 0.25

0.5 0.2

μA

NOTE: Devices are designed to meet the DC specifications shown in the above table, after thermal equilibrium has been established. The

circuit is in a test socket or mounted on a printed circuit board and transverse air flow greater than 500 lfpm is maintained.

1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.46 V / −0.8 V.

2. Outputs are terminated through a 50 ohm resistor to VCC−2 volts.

AC CHARACTERISTICS VCCx= 5.0 V; VEE= 0.0 V or VCCx= 0.0 V; VEE= −5.0 V (Note 1)

0°C

25°C

85°C

Symbol

Characteristic

Min Typ Max Min Typ Max Min Typ Max Unit

fMAX

tPLH

tPHL

Maximum Toggle Frequency

TBD

TBD

TBD

GHz

Propagation Delay to Output

ps

CLK 575 800 1025 575 800 1025 575 800 1025

MR 575 800 1025 575 800 1025 575 800 1025

CLK to S-OUT 575 800 1025 575 800 1025 575 800 1025

ts

Setup Time

ps

D 175 25

175 25

175 25

SHIFT 150 − 50

150 − 50

150 − 50

LOAD 225 50

225 50

225 50

S-IN 150 − 50

150 − 50

150 − 50

th

Hold Time

ps

D 250 25

250 25

250 25

SHIFT 300 100

300 100

300 100

LOAD 225

0

225

0

225

0

S-IN 300 100

300 100

300 100

tRR

Reset Recovery

600 350

600 350

600 350

ps

tSKEW

Within-Device Skew (Note 1.)

100

100

100

ps

tSKEW

Within-Gate Skew (Note 2.)

50

50

50

ps

tJITTER

Cycle−to−Cycle Jitter

TBD

TBD

TBD

ps

tr

Rise/Fall Times

tf

(20 - 80%)

ps

275 425 650 275 425 650 275 425 650

1. 10 Series: VEE can vary +0.46 V / −0.06 V.

100 Series: VEE can vary +0.46 V / −0.8 V.

1. Within-device skew is defined as identical transitions on similar paths through a device.

http://onsemi.com

4

Share Link: