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MC100EP58(2001) 데이터 시트보기 (PDF) - ON Semiconductor

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MC100EP58
(Rev.:2001)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MC100EP58 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
MC10EP58, MC100EP58
10EP DC CHARACTERISTICS, PECL VCC = 3.3 V, VEE = 0 V (Note 3.)
–40°C
25°C
85°C
Symbol
Characteristic
Min Typ Max Min Typ Max Min Typ Max Unit
IEE
VOH
Power Supply Current
Output HIGH Voltage (Note 4.)
20
28
37
20
30
39
22
31
40 mA
2165 2290 2415 2230 2355 2480 2290 2415 2540 mV
VOL
VIH
Output LOW Voltage (Note 4.)
Input HIGH Voltage (Single Ended)
1365 1490 1615 1430 1555 1680 1490 1615 1740 mV
2090
2415 2155
2480 2215
2540 mV
VIL
Input LOW Voltage (Single Ended)
1365
1690 1460
1755 1490
1815 mV
IIH
Input HIGH Current
150
150
150 µA
IIL
Input LOW Current
0.5
0.5
0.5
µA
NOTE: EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained.
3. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to –2.2 V.
4. All loading with 50 ohms to VCC–2.0 volts.
10EP DC CHARACTERISTICS, PECL VCC = 5.0 V, VEE = 0 V (Note 5.)
–40°C
25°C
85°C
Symbol
Characteristic
Min Typ Max Min Typ Max Min Typ Max Unit
IEE
Power Supply Current
20
28
37
20
30
39
22
31
40 mA
VOH
VOL
VIH
Output HIGH Voltage (Note 6.)
Output LOW Voltage (Note 6.)
Input HIGH Voltage (Single Ended)
3865 3990 4115 3930 4055 4180 3990 4115 4240 mV
3065 3190 3315 3130 3255 3380 3190 3315 3440 mV
3790
4115 3855
4180 3915
4240 mV
VIL
Input LOW Voltage (Single Ended)
3065
3390 3130
3455 3190
3515 mV
IIH
Input HIGH Current
150
150
150 µA
IIL
Input LOW Current
0.5
0.5
0.5
µA
NOTE: EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained.
5. Input and output parameters vary 1:1 with VCC. VEE can vary +2.0 V to –0.5 V.
6. All loading with 50 ohms to VCC–2.0 volts.
10EP DC CHARACTERISTICS, NECL VCC = 0 V, VEE = –5.5 V to –3.0 V (Note 7.)
–40°C
25°C
85°C
Symbol
Characteristic
Min Typ Max Min Typ Max Min Typ Max Unit
IEE
Power Supply Current
20
28
37
20
30
39
22
31
40 mA
VOH
Output HIGH Voltage (Note 8.)
–1135 –1010 –885 –1070 –945 –820 –1010 –885 –760 mV
VOL
Output LOW Voltage (Note 8.)
–1935 –1810 –1685 –1870 –1745 –1620 –1810 –1685 –1560 mV
VIH
Input HIGH Voltage (Single Ended) –1210
–885 –1145
–820 –1085
–760 mV
VIL
Input LOW Voltage (Single Ended) –1935
–1610 –1870
–1545 –1810
–1485 mV
IIH
Input HIGH Current
150
150
150 µA
IIL
Input LOW Current
0.5
0.5
0.5
µA
NOTE: EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained.
7. Input and output parameters vary 1:1 with VCC.
8. All loading with 50 ohms to VCC–2.0 volts.
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