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MC33201D(2004) 데이터 시트보기 (PDF) - ON Semiconductor

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MC33201D
(Rev.:2004)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MC33201D Datasheet PDF : 16 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
MC33201, MC33202, MC33204, NCV33202, NCV33204
DC ELECTRICAL CHARACTERISTICS (cont.) (VCC = + 5.0 V, VEE = Ground, TA = 25°C, unless otherwise noted.)
Characteristic
Figure Symbol
Min
Typ
Max
Large Signal Voltage Gain (VCC = + 5.0 V, VEE = − 5.0 V)
RL = 10 kW
RL = 600 W
Output Voltage Swing (VID = ± 0.2 V)
RL = 10 kW
RL = 10 kW
RL = 600 W
RL = 600 W
Common Mode Rejection (Vin = 0 V to 5.0 V)
Power Supply Rejection Ratio
VCC/VEE = 5.0 V/GND to 3.0 V/GND
Output Short Circuit Current (Source and Sink)
Power Supply Current per Amplifier (VO = 0 V)
TA = − 40° to +105°C
TA = − 55° to +125°C
7
AVOL
8, 9, 10
11
12
13, 14
15
VOH
VOL
VOH
VOL
CMR
PSRR
ISC
ID
50
300
25
250
4.85 4.95
0.05 0.15
4.75 4.85
0.15 0.25
60
90
500
25
50
80
0.9 1.125
0.9 1.125
AC ELECTRICAL CHARACTERISTICS (VCC = + 5.0 V, VEE = Ground, TA = 25°C, unless otherwise noted.)
Characteristic
Figure Symbol
Min
Typ
Max
Slew Rate
(VS = ± 2.5 V, VO = − 2.0 V to + 2.0 V, RL = 2.0 kW, AV = +1.0)
Gain Bandwidth Product (f = 100 kHz)
Gain Margin (RL = 600 W, CL = 0 pF)
Phase Margin (RL = 600 W, CL = 0 pF)
Channel Separation (f = 1.0 Hz to 20 kHz, AV = 100)
Power Bandwidth (VO = 4.0 Vpp, RL = 600 W, THD 1 %)
Total Harmonic Distortion (RL = 600 W, VO = 1.0 Vpp, AV = 1.0)
f = 1.0 kHz
f = 10 kHz
16, 26
SR
17
20, 21, 22
20, 21, 22
23
24
GBW
AM
OM
CS
BWP
THD
0.5
1.0
2.2
12
65
90
28
0.002
0.008
Open Loop Output Impedance
(VO = 0 V, f = 2.0 MHz, AV = 10)
Differential Input Resistance (VCM = 0 V)
Differential Input Capacitance (VCM = 0 V)
Equivalent Input Noise Voltage (RS = 100 W)
f = 10 Hz
f = 1.0 kHz
ZO
100
Rin
200
Cin
8.0
25
en
25
20
Equivalent Input Noise Current
f = 10 Hz
f = 1.0 kHz
25
in
0.8
0.2
Unit
kV/V
V
dB
mV/V
mA
mA
Unit
V/ms
MHz
dB
Deg
dB
kHz
%
W
kW
pF
nV/
Hz
pA/
Hz
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