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33285_07

Dual High-Side TMOS Driver

Freescale Semiconductor 

ELECTRICAL CHARACTERISTICS

STATIC ELECTRICAL CHARACTERISTICS

STATIC ELECTRICAL CHARACTERISTICS

Table 3. Static Electrical Characteristics

Characteristics noted under conditions TA from -40°C ≤ 125°C, VCC from 7 V ≤ 20 V, unless otherwise noted. Typical values

noted reflect the approximate parameter mean at TA = 25°C under nominal conditions, unless otherwise noted.

Characteristic

Symbol

Min

Typ

Max

Unit

OVERVOLTAGE AND OVER CURRENT

Load Dump Activation Time

Error Voltage Threshold

SRC PIN 1

Leakage Current

Leakage Current Detection Time

DRN PIN 3

Operating Current (7.0 V < VDRN < 20 V)

Leakage Current (0 V < VDRN < 20 V, VVCC < 4.0 V)

OUT1, PIN 2, AND OUT2 PIN 4

Output ON Voltage. Charge Pump ON

Turn OFF Current, VOUT > 0.5 V

VCC PIN 6

Supply Voltage Range

Quiescent Supply Current at VCC = 20 V

IN PIN 8

Input Low Voltage OUT1

Input High Voltage OUT1

Input Hysteresis OUT1 and OUT2

Input Pull Down Current, 0.7 V < VIN < 6.0 V

Open Input Voltage

Input Low Voltage OUT2

Input High Voltage OUT2

tOUT2ACT

VDRN - VSRC

300

1.12

ILCDET

15

tLCDET

130

IDRN

—

ILEAK-DRN

-5.0

VON

—

IOUTOFF

66

VCC

7.0

ICC

—

VIL

—

VIH

1.7

VHYS

0.4

IIN

7.5

VIOP

—

VIL2

—

VIH2

3.9

460

620

ms

—

1.44

V

30

50

mA

200

270

µA

—

1.5

mA

—

5.0

µA

—

VCC + 15

V

110

154

µA

—

40

V

—

10

mA

—

0.7

V

—

—

V

—

—

V

15

16.5

µA

—

0.7

V

—

3.0

V

—

—

V

Analog Integrated Circuit Device Data

Freescale Semiconductor

33285

5

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