MC33560 데이터 시트보기 (PDF) - ON Semiconductor

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MC33560

Power Management and Interface IC for Smartcard Readers and Couplers

ON Semiconductor 

MC33560

ELECTRICAL CHARACTERISTICS These specifications are written in the same style as common for standard

integrated circuits. The convention considers current flowing into the pin (sink current) as positive and current flowing out of the pin

(source current) as negative. (Conditions: VBAT = 4.0 V, VCC = 5.0 V nom, PWRON = VBAT , Operating Mode, −ICC = 10 mA, −25°C ≤ TA

≤ 85°C, L1 = 47 mH, RLIM = 0 W, CRDVCC capacitor = 10 mF, unless otherwise noted.)

Characteristic

Test Conditions

Symbol Min

Typ

Max

Unit

BATTERY POWER SUPPLY SECTION

Supply Voltage Range

Normal operating range extended operating range (Note 4)

VBAT

2.2

−

6.0

V

1.8

−

6.6

MC33560 Standby Quiescent Current

PWRON = GND, CRDCON = GND, ASYCLKIN = GND, VBAT = 6.0 V,

All Other Logic Inputs and Outputs Open

IoBAT

−

−

30

mA

DC Operating Current

−ICC = 10 mA; VCC = 5.0 V, VBAT = 6.0 V

VBAT Undervoltage Detection:

Upper Threshold

Lower Threshold

Hysteresis

IBATop

−

−

−

−

−

−

12.5

mA

V

1.6

−

1.4

−

0.2

−

VCC = 5.0 V NOMINAL POWER SUPPLY SECTION

Output Voltage

2.2 V v VBAT v 6.0 V

1.0 mA v −ICC v 25 mA

3.0 V v VBAT v 6.0 V

1.0 mA v −ICC v 60 mA

VCC

4.75

5.0

4.60

5.0

V

5.25

5.40

Card VCC Undervoltage Detection:

Upper Threshold

Lower Threshold

Switching Hysteresis

Peak Output Current

(RDYMOD Output)

(See Table 4)

VCC = 4.0 V, Internally Limited

(RDYMOD = L)

VT5H

VT5L

4.2

VHYS5

120

−ICClim

80

VCC − 0.14 V

4.5

180

mV

−

−

mA

Current limit time−out

Startup Current

VCC = 4.0 V

VCC = 2.0 V; 0°C to +85°C

−40°C to 0°C

td

−

160

−ICCst

80

−

50

−

−

ms

−

mA

−

Low Side Switch Saturation Voltage

IL = 50 mA, Pin 22

Vsat22

−

100

160

mV

Rectifier on Saturation Voltage

IL = 50 mA, Pin 22 to Pin 13

VFsat22

−

400

520

mV

Converter Switching Frequency

TA = 25°C

fsw

−

120

−

kHz

Shutdown Current

(Card access deactivated)

PWRON = GND, VCC = 2.0 V

ISD

80

−

−

mA

VCC = 3.0 V NOMINAL POWER SUPPLY SECTION (VBAT = 2.5 V, −ICC = 5.0 mA)

Output Voltage

2.2 V v VBAT v 6.0 V

VCC

1.0 mA v −ICC v 10 mA

2.5 V v VBAT v 6.0 V

1.0 mA v −ICC v 50 mA

Card VCC Undervoltage Detection:

Upper Threshold

Lower Threshold

Switching Hysteresis

(RDYMOD Output)

(See Table 4)

VT3H

VT3L

VHYS3

2.75

2.60

2.4

80

V

3.0

3.25

3.0

3.40

VCC − 0.1 V

2.7

110

mV

Startup Current

Shutdown Current

(Card access deactivated)

VCC = 2.0 V

−ICCst

50

−

PWRON = GND, VCC = 2.0 V

ISD

50

−

−

mA

−

4. See Figures 2 and 3.

5. The transistors T1 on lines IO, C4 and C8 (see Figure 24) have a max Rdson of 250 W.

6. Pin loading = 30 pF, except INVOUT = 15 pF.

7. As the clock buffer is optimized for low power consumption and hence not symmetrical, clock signal duty cycle is guaranteed for divide

by 2 and divide by 4 ratio.

8. In either direction.

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