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MC33993

Multiple Switch Detection Interface

Freescale Semiconductor 

ELECTRICAL CHARACTERISTICS

STATIC ELECTRICAL CHARACTERISTICS

Table 3. Static Electrical Characteristics (continued)

Characteristics noted under conditions 3.1 V ≤ VDD ≤ 5.25 V, 8.0 V ≤ VPWR ≤ 16 V, -40°C ≤ TC ≤ 125°C, unless otherwise

noted. Typical values noted reflect the approximate parameter means VPWR = 13 V, TA = 25°C under nominal conditions unless

otherwise noted.

Characteristic

Symbol

Min

Typ

Max

Unit

DIGITAL INTERFACE

Input Logic Voltage Thresholds (9)

SCLK, SI, Tri-State SO Input Current

0 V to VDD

VINLOGIC

0.8

–

2.2

V

ISCLK, ISI,

µA

ISO (TRI)

-10

–

10

CS Input Current

CS = VDD

ICS

µA

-10

–

10

CS Pull-Up Current

CS = 0 V

ICS

µA

30

–

100

SO High-State Output Voltage

ISO(HIGH) = -200 µA

VSO (HIGH)

V

VDD - 0.8

–

VDD

SO Low-State Output Voltage

ISO(HIGH) = 1.6 mA

Input Capacitance on SCLK, SI, Tri-State SO (10)

INT Internal Pull-Up Current

VSO (LOW)

–

CIN

–

–

15

V

–

0.4

–

20

pF

40

100

µA

INT Voltage

INT = Open Circuit

INT Voltage

I INT = 1.0 mA

V INT (HIGH)

V

VDD - 0.5

–

VDD

V INT (LOW)

V

–

0.2

0.4

WAKE Internal Pull-Up Current

WAKE Voltage

WAKE = Open Circuit

I WAKE (PU)

20

40

100

µA

V WAKE (HIGH)

V

4.0

4.3

5.3

WAKE Voltage

I WAKE = 1.0 mA

V WAKE(LOW)

V

–

0.2

0.4

WAKE Voltage

Maximum Voltage Applied to WAKE Through External Pull-Up

V WAKE(MAX)

–

V

–

40

Notes

9. Upper and lower logic threshold voltage levels apply to SI, CS, and SCLK.

10. This parameter is guaranteed by design but is not production tested.

33993

6

Analog Integrated Circuit Device Data

Freescale Semiconductor

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