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MC33152DG 데이터 시트보기 (PDF) - ON Semiconductor

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MC33152DG
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MC33152DG Datasheet PDF : 12 Pages
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MC34152, MC33152, NCV33152
MAXIMUM RATINGS
Rating
Power Supply Voltage
Logic Inputs (Note 1)
Drive Outputs (Note 2)
Totem Pole Sink or Source Current
Diode Clamp Current (Drive Output to VCC)
Power Dissipation and Thermal Characteristics
D Suffix, Plastic Package Case 751
Maximum Power Dissipation @ TA = 50°C
Thermal Resistance, JunctiontoAir
P Suffix, Plastic Package, Case 626
Maximum Power Dissipation @ TA = 50°C
Thermal Resistance, JunctiontoAir
Operating Junction Temperature
Operating Ambient Temperature
Operating Ambient Temperature
Operating Ambient Temperature
MC34152
MC33152
MC33152V, NCV33152
Symbol
VCC
Vin
IO
IO(clamp)
PD
RqJA
PD
RqJA
TJ
TA
Value
Unit
20
V
0.3 to +VCC
V
A
1.5
1.0
0.56
180
1.0
100
+150
0 to +70
40 to +85
40 to +125
W
°C/W
W
°C/W
°C
°C
Storage Temperature Range
Tstg
65 to +150
°C
Electrostatic Discharge Sensitivity (ESD)
Human Body Model (HBM)
Machine Model (MM)
ESD
V
2000
200
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. For optimum switching speed, the maximum input voltage should be limited to 10 V or VCC, whichever is less.
2. Maximum package power dissipation limits must be observed.
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