Freescale Semiconductor, Inc.
DYNAMIC ELECTRICAL CHARACTERISTICS
Characteristics noted under conditions 4.75 V ≤ VIO ≤ 5.25 V, 12 V ≤ VB+ ≤ 32 V, and 0°C ≤ TJ ≤ 105°C unless otherwise noted.
Typical values noted reflect the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise noted
Characteristic
Symbol
Min
Typ
Max
Unit
VI/O SWITCHING REGULATOR
Duty Cycle
D
45
–
55
%
Switching Rise and Fall Time
Load Resistance = 100 Ω, VB+ = 30 V
tr, tf
ns
25
–
–
Switching Rise and Fall Time
Load Resistance = 100 Ω, VB+ = 30 V
tr + tf
–
ns
–
50
SUPERVISOR CIRCUITRY
RST Delay
Cdelay = 0.1 µF
t delay
ms
48
–
82
RST Filter Time
VB+ = 9.0 V
t filter
µs
1.0
–
6.0
RST Fall Time
CL = 100 pF, RPULLUP = 4.7 kΩ, 90% to 10%
tf
ns
–
–
125
External Low (Note 12)
VI/O = 5.0 V
t slpl
(Note 13)
30
–
ns
–
RST Recovery Time Before Next RST Input (Note 12)
VI/O = 5.0 V
t phsl
µs
–
–
10
INTERNAL OSCILLATOR
Charge Pump and VI/O Switching Regulator Operating Frequency
VB+ = 9.0 V to 32 V
f OP
kHz
140
–
260
Notes
12. See Figure 2, RST Timing, page 9.
13. tslpl is an input.
34710
8
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