MCH3475 데이터 시트보기 (PDF) - SANYO -> Panasonic

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MCH3475

N-Channel Silicon MOSFET

SANYO -> Panasonic 

Ordering number : ENA1000A

MCH3475

SANYO Semiconductors

DATA SHEET

MCH3475

Features

• Ultrahigh speed switching

• 4V drive

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

VDSS

VGSS

ID

IDP

PD

Tch

PW≤10μs, duty cycle≤1%

When mounted on ceramic substrate (900mm2×0.8mm)

Storage Temperature

Tstg

This product is designed to “ESD immunity < 200V*”, so please take care when handling.

* Machine Model

Ratings

Unit

30

V

±20

V

1.8

A

7.2

A

0.8

W

150

°C

--55 to +150

°C

Package Dimensions

unit : mm (typ)

7019A-003

MCH3475-TL-E

2.0

0.15

3

0 t o 0.02

Product & Package Information

• Package

: MCPH3

• JEITA, JEDEC

: SC-70, SOT-323

• Minimum Packing Quantity : 3,000 pcs./reel

Packing Type : TL

Marking

FG

1

2

0.65

0.3

TL

Electrical Connection

3

1 : Gate

2 : Source

3 : Drain

1

SANYO : MCPH3

2

http://semicon.sanyo.com/en/network

60612TKIM/D1207PE TIIM TC-00001029 No. A1000-1/7

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