MCH3475 데이터 시트보기 (PDF) - SANYO -> Panasonic

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MCH3475

N-Channel Silicon MOSFET

SANYO -> Panasonic 

MCH3475

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

V(BR)DSS

IDSS

IGSS

VGS(off)

| yfs |

RDS(on)1

RDS(on)2

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

Conditions

ID=1mA, VGS=0V

VDS=30V, VGS=0V

VGS=±16V, VDS=0V

VDS=10V, ID=1mA

VDS=10V, ID=0.9A

ID=0.9A, VGS=10V

ID=0.5A, VGS=4V

VDS=10V, f=1MHz

See specified Test Circuit.

VDS=10V, VGS=10V, ID=1.8A

IS=1.8A, VGS=0V

Switching Time Test Circuit

VIN

10V

0V

VIN

PW=10μs

D.C.≤1%

G

VDD=15V

ID=0.9A

RL=16.7Ω

D

VOUT

P.G

50Ω

MCH3475

S

Ratings

Unit

min

typ

max

30

V

1

μA

±10

μA

1.2

2.6

V

0.66

1.1

S

135

180 mΩ

230

330 mΩ

88

pF

19

pF

11

pF

3.4

ns

3.6

ns

10.5

ns

4.0

ns

2.0

nC

0.33

nC

0.29

nC

0.86

1.2

V

Ordering Information

Device

MCH3475-TL-E

Package

MCPH3

Shipping

3,000pcs./reel

memo

Pb Free

No. A1000-2/7

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