MCP1727-3302ESN 데이터 시트보기 (PDF) - Microchip Technology

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MCP1727-3302ESN

1.5A, Low Voltage, Low Quiescent Current LDO Regulator

Microchip Technology 

MCP1727

AC/DC CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise noted, VIN = VOUT(MAX) + VDROPOUT(MAX) (Note 1), VR=1.8V for Adjustable Output,

IOUT = 1 mA, CIN = COUT = 4.7 µF (X7R Ceramic), TA = +25°C.

Boldface type applies for junction temperatures, TJ (Note 7) of -40°C to +125°C

Parameters

Sym

Min

Typ

Max

Units

Conditions

Dropout Characteristics

Dropout Voltage

Power Good Characteristics

VIN-VOUT

—

330

550

mV Note 5, IOUT = 1.5A,

VIN(MIN) = 2.3V

PWRGD Input Voltage Operat-

VPWRGD_VIN

1.0

ing Range

1.2

—

6.0

—

6.0

V TA = +25°C

TA = -40°C to +125°C

For VIN < 2.3V, ISINK = 100 µA

PWRGD Threshold Voltage

(Referenced to VOUT)

VPWRGD_TH

—

—

—

%VOUT Falling Edge

89

92

95

VOUT < 2.5V Fixed, VOUT = Adj.

90

92

94

VOUT >= 2.5V Fixed

PWRGD Threshold Hysteresis

VPWRGD_HYS

1.0

2.0

3.0

%VOUT

PWRGD Output Voltage Low

VPWRGD_L

—

0.2

0.4

V

IPWRGD SINK = 1.2 mA,

ADJ = 0V, SENSE = 0V

PWRGD Leakage

PWRGD_LK

—

1

—

nA VPWRGD = VIN = 6.0V

PWRGD Time Delay

TPG

Rising Edge

RPULLUP = 10 kΩ

ICDELAY = 140 nA (Typ)

—

200

—

µs CDELAY = OPEN

10

30

55

ms CDELAY = 0.01 µF

—

300

—

ms CDELAY = 0.1 µF

Detect Threshold to PWRGD

TVDET-PWRGD

—

200

—

Active Time Delay

µs

VADJ or VSENSE = VPWRGD_TH +

20 mV to VPWRGD_TH - 20 mV

Shutdown Input

Logic High Input

Logic Low Input

SHDN Input Leakage Current

VSHDN-HIGH

VSHDN-LOW

SHDNILK

45

15

-0.1

±0.001

+0.1

%VIN

%VIN

µA

VIN = 2.3V to 6.0V

VIN = 2.3V to 6.0V

VIN = 6V, SHDN =VIN,

SHDN = GND

AC Performance

Output Delay From SHDN

TOR

100

µs SHDN = GND to VIN

VOUT = GND to 95% VR

Note 1:

2:

3:

4:

The minimum VIN must meet two conditions: VIN ≥ 2.3V and VIN ≥ VOUT(MAX) + VDROPOUT(MAX).

VR is the nominal regulator output voltage for the fixed cases. VR = 1.2V, 1.8V, etc. VR is the desired set point output

voltage for the adjustable cases. VR = VADJ * ((R1/R2)+1). Figure 4-1.

TCVOUT = (VOUT-HIGH – VOUT-LOW) *106 / (VR * ΔTemperature). VOUT-HIGH is the highest voltage measured over the

temperature range. VOUT-LOW is the lowest voltage measured over the temperature range.

Load regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is

tested over a load range from 1 mA to the maximum specified output current.

5: Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its

nominal value that was measured with an input voltage of VOUT = VR + VDROPOUT(MAX).

6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction

temperature and the thermal resistance from junction to air. (i.e., TA, TJ, θJA). Exceeding the maximum allowable power

dissipation will cause the device operating junction temperature to exceed the maximum +150°C rating. Sustained

junction temperatures above 150°C can impact device reliability.

7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the

desired junction temperature. The test time is small enough such that the rise in the junction temperature over the

ambient temperature is not significant.

DS21999B-page 6

© 2007 Microchip Technology Inc.

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