MG600Q1US61 데이터 시트보기 (PDF) - Toshiba
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MG600Q1US61 Datasheet PDF : 8 Pages
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MG600Q1US61
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Turn-on delay time
Rise time
Switching time
Turn-on time
Turn-off delay time
Fall time
Turn-off time
Forward voltage
Reverse recovery time
Thermal resistance
IGES
ICES
VGE (off)
VCE (sat)
Cies
td (on)
tr
ton
td (off)
tf
toff
VF
trr
Rth (j-c)
VGE = ±20 V, VCE = 0 V
¾
VCE = 1200 V, VGE = 0 V
¾
IC = 600 mA, VCE = 5V
6.0
IC = 600 A,
VGE = 15 V
Tc = 25°C
¾
Tc = 125°C ¾
VCE = 10 V, VGE = 0 V, f = 1 MHz
¾
¾
Inductive load
VCC = 600 V
IC = 600 A
VGE = ±15 V
RG = 2.0 W
¾
¾
¾
(Note 1) ¾
¾
Tc = 25°C
¾
IF = 600 A, VGE = 0 V
Tc = 125°C ¾
IF = 600 A, VGE = -15 V,
di/dt = 1500 A/ms
¾
Transistor stage
¾
Diode stage
¾
¾ ±500 nA
¾
1
mA
7.0
8.0
V
2.1
2.6
V
2.7
3.2
50000 ¾
pF
0.3
¾
0.2
¾
0.5
¾
ms
0.5
¾
0.1
0.3
0.6
¾
2.4
2.8
V
2.2
¾
0.2
¾
ms
¾ 0.023
°C/W
¾ 0.05
Note 1: Switching time and reverse recovery time test circuit and timing chart
RG
-VGE
IC
RG
IF
VCC
L
VCE
Irr
IF
IF
90% Irr
50% Irr
trr
VGE
0
90%
IC
90%
0 td (off)
10%
tf
toff
10%
90%
10%
td (on)
tr
ton
2
2002-10-04
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