MG600Q1US61 데이터 시트보기 (PDF) - Toshiba
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MG600Q1US61 Datasheet PDF : 8 Pages
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Irr, trr – IF
1000
trr
100
10
0
Irr
VCC = 600 V
RG = 2 W
VGE = ±15 V
: Tj = 25°C
: Tj = 125°C
100
200
300
400
500
600
Forward current IF (A)
100000
50000
30000
C – VCE
IV
Cies
10000
5000
3000
Coes
1000
Common emitter
500 f = 1 MHz
300 Tj = 25°C
0.1
0.3 0.5 1
Cres
3 5 10
30 50 100
Collector-emitter voltage VCE (V)
MG600Q1US61
Edsw – IF
100
VCC = 600 V
RG = 2 W
VGE = ±15 V
: Tj = 25°C
: Tj = 125°C
10
1
0
100
200
300
400
500
600
Forward current IF (A)
3000
1000
Safe operating area
IC max (pulsed) *
IC max (continuous)
300
50 ms*
100
30
* Single nonrepetitive
10
pulse Tc = 25°C
Curves must be with
increase in
temperature.
3
1
3
10
30
100 ms*
1 ms*
100 300 1000 3000
Collector-emitter voltage VCE (V)
10000
Reverse bias soa
1000
100
Tj <= 125°C
VGE = ±15 V
RG = 2 W
10
0
200 400 600
800 1000 1200 1400
Collector-emitter voltage VCE (V)
1
Tc = 25°C
0.3
0.1
0.03
0.01
Rth (t) – tw
Diode stage
Transistor stage
0.003
0.001
0.0003
0.001
0.01
0.1
1
10
Pulse width tw (s)
6
2002-10-04
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