76113SK8 데이터 시트보기 (PDF) - Fairchild Semiconductor
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76113SK8 Datasheet PDF : 12 Pages
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HUF76113SK8
PSPICE Electrical Model
SUBCKT HUF76113SK8 2 1 3 ; REV 4 June 1998
CA 12 8 9.60-10
CB 15 14 9.95e-10
CIN 6 8 5.01e-10
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 32.3
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
GATE
1
LDRAIN 2 5 1.00e-9
LGATE 1 9 1.00e-9
LSOURCE 3 7 2.27e-10
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 2.01e-3
RGATE 9 20 2.94
RLDRAIN 2 5 10
RLGATE 1 9 10
RLSOURCE 3 7 2.27
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 17.50e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
DPLCAP 5
10
RSLC2
RSLC1
51
5
51
ESLC
DBREAK
11
LDRAIN
DRAIN
2
RLDRAIN
LGATE
RLGATE
-
ESG
6
8
+
EVTEMP
RGATE + 18 - 6
9
20 22
EVTHRES
+ 19 -
8
CIN
S1A
12 13
8
S2A
14
15
13
50
RDRAIN
16
21
+
17
EBREAK 18
-
MWEAK
DBODY
MMED
MSTRO
8
7
RSOURCE
LSOURCE
SOURCE
3
RLSOURCE
RBREAK
17
18
S1B
S2B
CA
13
CB
+
+ 14
EGS
6
8
-
EDS
5
8
-
RVTEMP
19
IT
-
VBAT
+
8
22
RVTHRES
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*180),2.5))}
.MODEL DBODYMOD D (IS = 9.35e-13 RS = 1.39e-2 TRS1 = 1.12e-6 TRS2 = 1.05e-6 CJO = 9.85e-10 TT = 2.82e-8 M = 0.42 )
.MODEL DBREAKMOD D (RS = 1.91e-1 TRS1 = 3.51e-3 TRS2 = 1.21e-6 )
.MODEL DPLCAPMOD D (CJO = 5.51e-10 IS = 1e-30 N = 10 M = 0.60 )
.MODEL MMEDMOD NMOS (VTO = 1.76 KP = 3.55 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 2.94)
.MODEL MSTROMOD NMOS (VTO = 2.08 KP = 37 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 1.48 KP = 0.095 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 29.4 RS=0.1)
.MODEL RBREAKMOD RES (TC1 = 1.02e-3 TC2 = 1.10e-7)
.MODEL RDRAINMOD RES (TC1 = 4.05e-2 TC2 = 1.12e-4)
.MODEL RSLCMOD RES (TC1 = 9.92e-3 TC2 = -2.06e-5)
.MODEL RSOURCEMOD RES (TC1 = 0 TC2 = 0)
.MODEL RVTHRESMOD RES (TC1 = -1.87e-3 TC2 = -5.42e-6)
.MODEL RVTEMPMOD RES (TC1 = -1.12e-3 TC2 = 1.12e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -7.00 VOFF= -1.55)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.55 VOFF= -7.00)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.00 VOFF= 1.05)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 1.05 VOFF= 0.00)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
©2003 Fairchild Semiconductor Corporation
HUF76113SK8 Rev. B1
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