MJ3041 데이터 시트보기 (PDF) - Inchange Semiconductor
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MJ3041 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlingtion Power Transistor
MJ3041
DESCRIPTION
·Built-in Base-Emitter Shunt Resistors
·High DC current gain-
hFE = 250 (Min) @ IC =2.5A
·Collector-Emitter Sustaining Voltage-
VCEO(SUS)=300V(Min)
APPLICATIONS
·Developed for line operated amplifier, series pass and
Switching regulator applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
400
V
VCEO Collector-Emitter Voltage
300
V
VEBO Emitter-Base Voltage
8
V
IC
Collector Current -Continuous
10
A
PC
Collector Power Dissipation@TC=25℃ 175
W
TJ
Junction Temperature
Tstg
Storage Temperature
200
℃
-55~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX
1.0
UNIT
℃/W
isc Website：www.iscsemi.cn
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