INCHANGE Semiconductor
isc Silicon NPN Darlingtion Power Transistor
isc Product Specification
MJ3041
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC=2.5A; IB=50mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC=5A; IB=400mA
VBE(on) Base-Emitter On voltage
ICBO
Collector Cutoff current
IEBO
Emitter Cut-off current
IC=2.5A ; VCE=5V
VCE=400V; IE= 0
VCE=400V; IE= 0, TC=100℃
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC=2.5A ; VCE=5V
hFE-2
DC Current Gain
IC=5A ; VCE=5V
MIN MAX UNIT
300
V
2.2
V
2.5
V
2.5
V
1.0
5.0
mA
40
mA
250
50
isc Website:www.iscsemi.cn
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