MJD41CT4(2004) 데이터 시트보기 (PDF) - ON Semiconductor

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MJD41CT4
(Rev.:2004)

Complementary Power Transistors

ON Semiconductor 

MJD41C (NPN) MJD42C (PNP)

TA TC

2.5 25

TYPICAL CHARACTERISTICS

VCC

+30 V

2 20

1.5 15

TC

1 10 TA SURFACE MOUNT

0.5 5

00

25

50

75

100

125

T, TEMPERATURE (°C)

Figure 1. Power Derating

+11 V

0

25 ms

−9 V

RB

51

RC

SCOPE

D1

tr, tf ≤ 10 ns

DUTY CYCLE = 1%

−4 V

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, e.g.:

MSB5300 USED ABOVE IB ≈ 100 mA

150

MSD6100 USED BELOW IB ≈ 100 mA

REVERSE ALL POLARITIES FOR PNP.

Figure 2. Switching Time Test Circuit

500

300

200

TJ = 150°C

100

70

25°C

50

30

20

−55 °C

VCE = 2 V

10

7

5

0.06 0.1

0.2 0.3 0.4 0.6 1

2

IC, COLLECTOR CURRENT (AMP)

Figure 3. DC Current Gain

46

2

TJ = 25°C

1.6

1.2

0.8 VCE(sat) @ IC/IB = 10

VBE @ VCE = 4 V

0.4

VBE(sat) @ IC/IB = 10

0

0.06 0.1

0.2 0.3 0.4 0.6 1

2 34 6

IC, COLLECTOR CURRENT (AMP)

Figure 5. “On” Voltages

2

1

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.06 0.1

5

3

2

1

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.06 0.1

TJ = 25°C

VCC = 30 V

IC/IB = 10

tr

td @ VBE(off) ≈ 5 V

0.2

0.4 0.6 1

2

IC, COLLECTOR CURRENT (AMP)

Figure 4. Turn−On Time

46

TJ = 25°C

VCC = 30 V

IC/IB = 10

ts

IB1 = IB2

tf

0.2

0.4 0.6 1

2

IC, COLLECTOR CURRENT (AMP)

Figure 6. Turn−Off Time

46

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