MJD41CT4(2004) 데이터 시트보기 (PDF) - ON Semiconductor
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MJD41CT4 Datasheet PDF : 6 Pages
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MJD41C (NPN) MJD42C (PNP)
2
300
TJ = 25°C
1.6
200
IC = 1 A
1.2
2.5 A
5A
Cib
100
0.8
70
Cob
0.4
50
TJ = 25°C
0
30
10
20 30 50
100
200 300 500
1000
0.5
IB, BASE CURRENT (mA)
Figure 7. Collector Saturation Region
1
23 5
10
20 30 50
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitance
1
0.7 D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
0.05
0.07
0.05 0.02
0.03
0.01
0.02 SINGLE PULSE
0.01
0.01 0.02 0.03 0.05 0.1
RqJC(t) = r(t) RqJC
RqJC = 6.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2 0.3 0.5 1
2 3 5 10 20 30 50
t, TIME (ms)
Figure 9. Thermal Response
100 200 300 500 1000
10
500 ms
100 ms
5
3
2
dc
1 ms
5 ms
1
0.5
WIRE BOND LIMIT
0.3
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
0.1
CURVES APPLY BELOW RATED VCEO
0.05
0.03
TC = 25°C SINGLE PULSE
TJ = 150°C
MJD41C, 42C
0.01
1
2 3 5 7 10
20 30 50 70 100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 10. Maximum Forward Bias
Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 10 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 9. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
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