MJ425 데이터 시트보기 (PDF) - Inchange Semiconductor
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MJ425 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·High Collector-Emitter Voltage-VCEX= 700V
·DC Current Gain-hFE=10(min)@ IC=2.5A
·Low Collector-Emitter Saturation Voltage-
VCE(sat)=0.8Vdc(max)@IC=1Adc
APPLICATIONS
·Designed for use in high voltage applications in deflection
circuits, swithing regulators, inverters, and tine operated
amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
700
V
VCEO Collector-Emitter Voltage
400
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5
A
IBB
Base Current-Continuous
2
A
PC
Collector Power Dissipation@TC=25℃
100
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
0.75
℃/W
isc Product Specification
MJ425
isc Website：www.iscsemi.cn
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