MJE803T 데이터 시트보기 (PDF) - Inchange Semiconductor
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MJE803T Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
MJE803T
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB=B 40mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB=B 40mA
VBE(on)-1 Base-Emitter On Voltage
IC= 2A; VCE= 3V
VBE(on)-2 Base-Emitter On Voltage
IC= 4A; VCE=3V
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 80V; IB= 0
VCB= 80V; IE= 0
VCB= 80V; IE= 0;TC= 100℃
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 2A ; VCE= 3V
hFE-2
DC Current Gain
IC= 4A ; VCE= 3V
MIN MAX UNIT
80
V
2.8
V
3.0
V
2.5
V
3.0
V
0.1
mA
0.1
0.5
mA
2.0
mA
750
100
isc Website：www.iscsemi.cn
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