MJE3055 데이터 시트보기 (PDF) - Inchange Semiconductor
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MJE3055 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJE3055
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 60V(Min)
·High DC Current Gain-
: hFE= 20-100@IC= 4A
·Complement to Type MJE2955
APPLICATIONS
·Designed for use in general-purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
70
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
IBB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
6
A
90
W
150
℃
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.39
UNIT
℃/W
isc Website：www.iscsemi.cn
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