CM200DU-12H 데이터 시트보기 (PDF) - Powerex
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CM200DU-12H Datasheet PDF : 4 Pages
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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM200DU-12H
Dual IGBTMOD™ U-Series Module
200 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
CM200DU-12H
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (Tc = 25°C)
Peak Collector Current
Emitter Current** (Tc = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C)
Mounting Torque, M5 Main Terminal
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
Pc
–
-40 to 150
-40 to 125
600
±20
200
400*
200
400*
650
31
Mounting Torque, M6 Mounting
–
40
Weight
–
310
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Viso
2500
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Collector-Cutoff Current
Gate Leakage Voltage
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage**
ICES
VCE = VCES, VGE = 0V
–
IGES
VGE = VGES, VCE = 0V
–
VGE(th)
IC = 20mA, VCE = 10V
4.5
VCE(sat)
IC = 200A, VGE = 15V, Tj = 25°C
–
IC = 200A, VGE = 15V, Tj = 125°C
–
QG
VCC = 300V, IC = 200A, VGE = 15V
–
VEC
IE = 200A, VGE = 0V
–
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Typ.
–
–
6
2.4
2.6
400
–
Max.
1
0.5
7.5
3.0
–
–
2.6
Units
mA
µA
Volts
Volts
Volts
nC
Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Turn-on Delay Time
Load
Rise Time
Switch
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
Cies
Coes
Cres
td(on)
tr
td(off)
tf
trr
Qrr
VCE = 10V, VGE = 0V
VCC = 300V, IC = 200A,
VGE1 = VGE2 = 15V,
RG = 3.1⍀, Resistive
Load Switching Operation
IE = 200A, diE/dt = -400A/µs
IE = 200A, diE/dt = -400A/µs
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Min.
Typ.
Max. Units
–
–
17.6
nf
–
–
9.6
nf
–
–
2.6
nf
–
–
150
ns
–
–
400
ns
–
–
300
ns
–
–
300
ns
–
–
160
ns
–
0.48 –
µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
Rth(j-c)Q
Per IGBT 1/2 Module
–
Thermal Resistance, Junction to Case
Rth(j-c)D
Per FWDi 1/2 Module
–
Contact Thermal Resistance
Rth(c-f)
Per Module, Thermal Grease Applied
–
Typ.
–
–
0.035
Max.
0.19
0.35
–
Units
°C/W
°C/W
°C/W
30
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