MMBD2835LT1G(2005) 데이터 시트보기 (PDF) - ON Semiconductor

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MMBD2835LT1G
(Rev.:2005)

Monolithic Dual Switching Diodes

ON Semiconductor 

MMBD2835LT1, MMBD2836LT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Breakdown Voltage (IR = 100 mAdc)

MMBD2835LT1

V(BR)

35

MMBD2836LT1

75

−

Vdc

−

Reverse Voltage Leakage Current (Note 3)

(VR = 30 Vdc)

(VR = 50 Vdc)

IR

MMBD2835LT1

MMBD2836LT1

Diode Capacitance (VR = 0 V, f = 1.0 MHz)

CT

Forward Voltage (IF = 10 mAdc)

VF

Forward Voltage (IF = 50 mAdc)

Forward Voltage (IF = 100 mAdc)

Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1)

trr

3. For each individual diode while the second diode is unbiased.

−

nAdc

−

100

100

−

4.0

pF

−

1.0

Vdc

−

1.0

−

1.2

−

4.0

ns

820 W

+10 V

2.0 k

100 mH IF

0.1 mF

DUT

50 W OUTPUT

PULSE

GENERATOR

0.1 mF

tr

tp

t

10%

50 W INPUT

SAMPLING

VR

OSCILLOSCOPE

90%

INPUT SIGNAL

IF

trr

t

iR(REC) = 1.0 mA

IR

OUTPUT PULSE

(IF = IR = 10 mA; MEASURED

at iR(REC) = 1.0 mA)

Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

Notes: 3. tp » trr

Figure 1. Recovery Time Equivalent Test Circuit

http://onsemi.com

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