MMBD4148T 데이터 시트보기 (PDF) - Willas Electronic Corp.

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MMBD4148T

SOT-523 Plastic-Encapsulate Diodes

Willas Electronic Corp. 

WILLAS MMBD414F8MT120-M+

SOT-523 Plastic-Encapsulate Diodes

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V

BAS16FTM1T2H0R0U-M+

SOD-123+ PACKAGE

Pb Free Product

SWITCHFINeGatDuIOreDsE

FEATU•RBbeEattStcehr

process

reverse

design,

leakage

excellent

current a

power dissipation offers

nd thermal resistance.

z Fas•tLSoww iptcrohfiilnegsuSrpfaecee dmounted application in order to

optimize board space.

z For•GLoewneporawlePr luosrps,ohsigehSewffiicticehnicnyg. Applications

z Hig•hHCigohncduurrcetnat ncacpeability, low forward voltage drop.

z Pb-•FHriegeh spuarcgekacagpeabisilitay.vailable

• Guardring for overvoltage protection.

RoH• USltprarohdiguhc-st pfoeer dpsawciktcinhgingc.ode suffix ”G”

Hal•oSgielincofnreeepitparxoiadlupclatnfaorrcphaipc,kminegtalcsoildiceonsujufnficxti“oHn.”

z Moi•sLtMueIraLed-S-SfTreeDne-s1pi9at5irvt0si0tmy/2eL2ee8tveenlv1ironmental standards of

Marking•:

RoHS product for packing code suffix "G"

HMaMlogBeDn f4re1e4p8roTd:uKctAfo2r,packing code suffix

"H"

MBeAcS1h6aTn:Aic2al data

• Epoxy : UL94-V0 rated flame retardant

Maximu•mCaRseat:iMnogldse@d pTlaas=ti2c,5S℃OD-123H

,

• Terminals P:Palraatemdetteerrminals, solderable per MSILy-mSTbDo-l750

Non-Repetitive PeakMReethvoedrs2e0V26oltage

VRM

• Polarity : Indicated by cathode band

Package outline

SOT-523

SOD-123H

0.146(3.7)

0.130(3.3)

1

2

0.012(0.3) Typ.

0.071(1.8)

0.056(1.4)

3

0.040(1.0)

0.024(0.6)

0.031(0.8) Typ.

0.031(0.8) Typ.

Limit

Unit

100

V

Dimensions in inches and (millimeters)

Peak Re•pMetoituivnetinPgePakosRiteiovner:sAenyVoltage

VRRM

Working•PWeeaikghRte:vAeprpsreoVxiomltaatgeed 0.011 gram

VRWM

75

V

DC Blocking Voltage

VR

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

RMS Reverse Voltage

Ratings at 25℃ ambient

temperature

unless

otherwise

speVcRif(iReMdS. )

53

V

FoSrinwgalerdphCaosnetihnaulfowuasvCe,u6r0reHnzt, resistive of inductive load. IFM

300

mA

AvFeoracgaepaRcieticvetiflioeadd,Oduetrpautet Ccuurrerennt bt y 20%

IO

150

mA

Peak Forward SurgeRCAuTrIrNeGntS@t=1.0μs

Marking Code

@ t=1.0s

Maximum Recurrent Peak Reverse Voltage

Power Dissipation

Maximum RMS Voltage

TMhaexrimmuaml RDeCsBislotacnkicneg VJoulntacgteion to Ambient

JMunaxcitmiounmTAevmerapgeeraFtourwreard Rectified Current

SYMBOL FM120-MH FM130-MH FM1402-M.0H FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U

IFSM12

13

14 1.0 15

16

18

A10

115 120

VRRM

20

30

40

50

60

Pd

200

VRMS

14

21

28

35

42

80

100

mW

56

70

150

200 Vo

105

140 Vo

VDC RθJA20

30

40625 50

60

80 K/W100

150

200 Vo

IO

Tj

150

1.0

℃

Am

Storage Temperature

Peak Forward Surge Current 8.3 ms single half sine-wave

TSTG

IFSM

-55~+150

℃

30

Am

ElsTeuycppeitcrriamilcpToahselerdRmoaanl tRrianetesgdissltoaan@dce(JTE(NaDoE=teC22m5)e℃thod)

RΘJA

40

℃

Typical JunctionPCaarpaacmitaentceer (Note 1)

Operating Temperature Range

SymbCoJ l

TJ

Min -55Tytop+125 Max Unit

120

Con-5d5ittioon+1s50

P

℃

RSetovreargseeTebmrepearkadtuorewRnanvgoeltage

VT(SBRTG)

75

V - 65 to +175 IR=1μA

℃

VF1

0.715 V

IF=1mA

CHARACTERISTICS

FMoarxwimaurmd FvoorlwtaargdeVoltage at 1.0A DC

Maximum Average Reverse Current at @T A=25℃

Rated DC Blocking Voltage

@T A=125℃

VSFY2VMFBOL

FM120-MH

FM130-MH FM014.08-5M5H

0.50

FM150V-MH FM160-MH

0.70

FM180-IMF0=H.81F50Mm11A00-MH

FM1150-MH

0.9

FM1200-MH

0.92

UN

Vo

VF3

IR

VF4

1.0

V

0.5

IF=50mA

mA

1.25

V

10

IF=150mA

RN1-eOMvTeeEaSrss:ueredcuatr1reMnHtZ

and

applied

reverse

voltage

of

4.0

IR1

VDIRC2.

C2-aTphaecrmitaal nRceseisbtaenctwe Fereomn JtuenrcmtioinntaolAsmbient

CT

1

μA

25

nA

2

pF

VR=75V

VR=20V

VR=0V,f=1MHz

Reverse recovery time

trr

4

ns

IF=IR=10mA

Irr=0.1XIR,RL=100Ω

2012-06

2012-1

WILLAS ELECTRONIC CORP.

WILLAS ELECTRONIC CORP.

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