MMBD4148T 데이터 시트보기 (PDF) - Willas Electronic Corp.
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MMBD4148T Datasheet PDF : 3 Pages
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WILLAS SOT-523 Plastic-Encapsulate
1.0A SURFACE MOUNT SCHOTTKY BARRIER
Diodes
RECTIFIERS
-20V-
200V
MMBBADS1461FT4FM8MT1T12H20R00U--MM++
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
• Batch process design, excellent power dissipation offers
O u t l i n e D r a w i n g better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
S O T- 5 2 3 SOD-123H
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
0.071(1.8)
0.056(1.4)
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
.067(1.70)
• Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
.059(1.50) ,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
• Mounting Position : Any
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
.014(0.35)
For capacitive load, derate current by 20%
Marking Code
RATINGS
.043(1.10)
.010(0.25)
.008(0.20)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
12 13 14 15 16 .0041(80.10)10
115 120
.035(0.90) Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
Maximum RMS Voltage
VRMS
14
21
28
35
42
80
100
150
200 V
56
70
105
140 V
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200 V
Maximum Average Forward Rectified Current
IO
1.0
A
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
30
A
Typical Thermal Resistance (Note 2)
RΘJA
40
℃
Typical Junction Capacitance (Note 1)
Operating Tem.p0er0atu4re(0Ra.n1g0e )MAX.
CJ
TJ
-55 to +125
120
-55 to +150
Storage Temperature Range
TSTG
- 65 to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
0.50
0.70
0.85
0.9
0.92 V
.014(0.35) Maximum Average Reverse Current at @T A=25℃
IR
Rated DC Blocking Voltage
@T A=125℃
.006(0.15)
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.5
m
10
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
Dimensions in inches and (millimeters)
WILLAS ELECTRReOvN.DIC CORP
WILLAS ELECTRONIC CORP.
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