MMBD5819 데이터 시트보기 (PDF) - TY Semiconductor

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MMBD5819

Schottky Diodes

TY Semiconductor 

Features

Power Dissipation: PD = 300mW

Collector Current: IF = 1A

Collector-Base Voltage: VR = 40V

PIN Array

Product specification

MMBD5819

SOT-23

2.9+0.1

-0.1

0.4+0.1

-0.1

3

1

2

0.95+0.1

-0.1

1.9+0.1

-0.1

Unit: mm

0.1+0.05

-0.01

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector Current

Collector-Base Voltage

Power Dissipation

Operating and Storage Junction Temperature Range

Symbol

Rating

Unit

IF

1

A

VR

40

V

PD

300

mW

Tj,TSTG

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Reverse Breakdown Voltage

Forward Voltage (pulse test)

Reverse Voltage Leakage Current

Diode Capacitance

Marking

Marking

SL

Symbol

Testconditons

V(BR)R IR = 1mA

IF = 1A

VF

IF = 3A

VR = 20V

IR

VR = 40V

CD VR = 0, f = 1.0MHz

Min Typ Max Unit

40

V

0.6

V

0.9

1

A

1

120 pF

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sales@twtysemi.com

4008-318-123

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