MMBFJ309LT1G(2009) 데이터 시트보기 (PDF) - ON Semiconductor
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MMBFJ309LT1G Datasheet PDF : 5 Pages
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MMBFJ309LT1G, MMBFJ310LT1G
70
70
60
VDS = 10 V
50
IDSS
40
+ 25°C
60
TA = - 55°C
50
+ 25°C
40
30
+150°C 30
20
+ 25°C
20
- 55°C
10
+150°C 10
0
-5.0
-4.0
-3.0
-2.0
-1.0
0
ID - VGS, GATE-SOURCE VOLTAGE (VOLTS)
IDSS - VGS, GATE-SOURCE CUTOFF VOLTAGE (VOLTS)
Figure 1. Drain Current and Transfer
Characteristics versus Gate−Source Voltage
100 k
10 k
1.0 k
Yfs
Yfs
100
1.0 k
VGS(off) = - 2.3 V =
10
Yos
VGS(off) = - 5.7 V =
100
0.01
1.0
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
ID, DRAIN CURRENT (mA)
Figure 2. Common−Source Output
Admittance and Forward Transconductance
versus Drain Current
10
120
RDS
96
7.0
72
Cgs
4.0
48
Cgd
24
1.0
0
0
10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 3. On Resistance and Junction
Capacitance versus Gate−Source Voltage
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