MMBT5088 데이터 시트보기 (PDF) - Weitron Technology

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MMBT5088

Low Noise NPN Transistor Surface Mount

Weitron Technology 

Low Noise NPN Transistor

Surface Mount

P b Lead(Pb)-Free

Maximum Ratings

Rating

Collector-Emitter Voltage

Collector-B as e Voltage

E m itter-B as e Voltage

Collector Current-Continuous

Thermal Characteristics

Characteristics

Total Device Dis s ipation FR -5 B oard (1)

TA=25 C

Derate above 2 5 C

Thermal Res is tance, Junction to Ambient

Total Device Dis s ipation

Alumina S ubs trate, (2) T A=2 5 C

Derate above 2 5 C

Thermal Res is tance, Junction to Ambient

J unction and S torage, Tem perature

Device Marking

MMBT5088=1Q ; MMBT5089=1R

COLLECTOR

3

1

BASE

2

EMITTER

MMBT5088

MMBT5089

3

1

2

SOT-23

Symbol

VCEO

VCB O

VE B O

IC

5088LT1

30

35

5089LT1

25

30

4.5

50

Unit

Vdc

Vdc

Vdc

m Adc

Symbol

PD

R JA

PD

R JA

T J,Ts tg

Max

225

1.8

556

300

2.4

417

-5 5 to +1 5 0

Unit

mW

mW/ C

C/ W

mW

mW/ C

C/ W

C

Electrical Characteristics (TA=25ºC Unless Otherwise noted)

Characteristics

Symbol

Min

Max

Unit

Off Characteristics

Collent-Emitter Breakdown Voltage

IC = 1.0mA, IB=0

MMBT5088

IC = 1.0mA, IB=0

MMBT5089

Collent-Base Breakdown Voltage

IC = 100µA, IE=0

MMBT5088

IC = 100µA, IE=0

MMBT5089

Collent Cutoff Current

VCB = 20V, IE=0

VCB = 15V, IE=0

MMBT5088

MMBT5089

Emitte Cutoff Current

VEB(off) = 3.0V, IC=0

VEB(off) = 4.5V, IC=0

MMBT5088

MMBT5089

1. FR-5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

V(B R )CE O

30

-

V

25

V(B R )CB O

35

-

V

30

ICB O

IE B O

-

50

nA

50

-

50

nA

100

WEITRON

1/5

http://www.weitron.com.tw

13-Jan-06

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