MMBTA55LT1G 데이터 시트보기 (PDF) - ON Semiconductor
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MMBTA55LT1G Datasheet PDF : 5 Pages
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MMBTA55L Series,
MMBTA56L Series,
SMMBTA56L Series
Driver Transistors
PNP Silicon
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
MMBTA55
MMBTA56, SMMBTA56
VCEO
Vdc
−60
−80
Collector −Base Voltage
MMBTA55
MMBTA56, SMMBTA56
VCBO
Vdc
−60
−80
Emitter −Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VEBO
IC
−4.0
−500
Vdc
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
(Note 1) TA = 25°C
Derate above 25°C
PD
225
mW
1.8
mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
RqJA
PD
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
www.onsemi.com
SOT−23
CASE 318
STYLE 6
COLLECTOR
3
1
BASE
2
EMITTER
MARKING DIAGRAM
2xx M G
G
1
2xx = Device Code
x = H for MMBTA55LT1G
xx = GM for MMBTA56LT1G,
SMMBTA56LT1G
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 1994
1
October, 2016 − Rev. 8
Publication Order Number:
MMBTA55LT1/D
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