MMBTA55LT1G 데이터 시트보기 (PDF) - ON Semiconductor

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MMBTA55LT1G

Driver Transistors

ON Semiconductor 

MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage (Note 3)

(IC = −1.0 mAdc, IB = 0)

MMBTA55

MMBTA56, SMMBTA56

V(BR)CEO

Vdc

−60

−

−80

−

Emitter −Base Breakdown Voltage

(IE = −100 mAdc, IC = 0)

Collector Cutoff Current

(VCE = −60 Vdc, IB = 0)

Collector Cutoff Current

(VCB = −60 Vdc, IE = 0)

MMBTA55

(VCB = −80 Vdc, IE = 0)

MMBTA56, SMMBTA56

V(BR)EBO

ICES

ICBO

−4.0

−

−

−

−

−0.1

−0.1

−0.1

Vdc

mAdc

mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = −10 mAdc, VCE = −1.0 Vdc)

(IC = −100 mAdc, VCE = −1.0 Vdc)

Collector −Emitter Saturation Voltage

(IC = −100 mAdc, IB = −10 mAdc)

Base −Emitter On Voltage

(IC = −100 mAdc, VCE = −1.0 Vdc)

SMALL− SIGNAL CHARACTERISTICS

hFE

−

100

−

100

−

VCE(sat)

−

Vdc

−0.25

VBE(on)

−

Vdc

−1.2

Current −Gain − Bandwidth Product (Note 4)

(IC = −100 mAdc, VCE = −1.0 Vdc, f = 100 MHz)

fT

MHz

50

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

4. fT is defined as the frequency at which |hfe| extrapolates to unity.

TURN-ON TIME

-1.0 V

VCC

+40 V

TURN-OFF TIME +VBB

VCC

+40 V

5.0 ms

+10 V

0

tr = 3.0 ns

100

Vin

RB

5.0 mF

100

RL

OUTPUT

* CS t 6.0 pF

5.0 ms

tr = 3.0 ns

100

Vin

RB

5.0 mF

100

RL

OUTPUT

* CS t 6.0 pF

*Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities

Figure 1. Switching Time Test Circuits

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