MMDF3N03HDR2 데이터 시트보기 (PDF) - ON Semiconductor
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MMDF3N03HDR2 Datasheet PDF : 10 Pages
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MMDF3N03HD
Preferred Device
Power MOSFET
3 Amps, 30 Volts
N−Channel SO−8, Dual
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain−to−source diode has a very low reverse recovery time.
MiniMOSt devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc−dc converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls
in mass storage products such as disk drives and tape drives. The
avalanche energy is specified to eliminate the guesswork in designs
where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery
Life
• Logic Level Gate Drive − Can Be Driven by Logic ICs
• Miniature SO−8 Surface Mount Package − Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for SO−8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 MΩ)
Gate−to−Source Voltage − Continuous
Drain Current − Continuous @ TA = 25°C
Drain Current − Continuous @ TA = 100°C
Drain Current − Single Pulse (tp ≤ 10 μs)
Total Power Dissipation @ TA = 25°C
(Note 1.)
VDSS
VDGR
VGS
ID
ID
IDM
PD
30
Vdc
30
Vdc
± 20 Vdc
4.1
Adc
3.0
40
Apk
2.0 Watts
Operating and Storage Temperature Range TJ, Tstg − 55 to °C
150
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 5.0 Vdc, Peak
IL = 9.0 Apk, L = 8.0 mH, RG = 25 Ω)
Thermal Resistance − Junction to Ambient
(Note 1.)
EAS
RθJA
324
mJ
62.5 °C/W
Maximum Lead Temperature for Soldering
TL
Purposes, 1/8″ from case for 10 seconds
260
°C
1. When mounted on 2″ square FR−4 board (1″ square 2 oz. Cu 0.06″ thick
single sided) with one die operating, 10s max.
http://onsemi.com
3 AMPERES
30 VOLTS
RDS(on) = 70 mW
N−Channel
D
G
S
MARKING
DIAGRAM
8
SO−8, Dual
CASE 751
STYLE 11
D3N03
LYWW
1
L
= Location Code
Y
= Year
WW = Work Week
PIN ASSIGNMENT
Source−1
Gate−1
Source−2
Gate−2
18
27
36
45
Top View
Drain−1
Drain−1
Drain−2
Drain−2
ORDERING INFORMATION
Device
Package
Shipping
MMDF3N03HDR2 SO−8 2500 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 8
Publication Order Number:
MMDF3N03HD/D
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