MMDF3N03HDR2 데이터 시트보기 (PDF) - ON Semiconductor
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MMDF3N03HDR2 Datasheet PDF : 10 Pages
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MMDF3N03HD
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 μAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Threshold Temperature Coefficient (Negative)
IDSS
IGSS
VGS(th)
Static Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 3.0 Adc)
(VGS = 4.5 Vdc, ID = 1.5 Adc)
Forward Transconductance
(VDS = 3.0 Vdc, ID = 1.5 Adc)
RDS(on)
gFS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 24 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 15 Vdc, ID = 3.0 Adc,
VGS = 4.5 Vdc,
RG = 9.1 Ω)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 15 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
Gate Charge
(VDS = 10 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 1)
(IS = 3.0 Adc, VGS = 0 Vdc)
(IS = 3.0 Adc, VGS = 0 Vdc,
TJ = 125°C)
Reverse Recovery Time
See Figure 12
(IS = 3.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
Reverse Recovery Storage Charge
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
Min
Typ
Max
Unit
30
−
−
34.5
Vdc
−
−
mV/°C
μAdc
−
−
1.0
−
−
10
−
−
100
nAdc
Vdc
1.0
1.7
3.0
mV/°C
Ohms
−
0.06
0.07
−
0.065 0.075
2.0
3.6
Mhos
−
−
450
630
pF
−
160
225
−
35
70
−
12
24
ns
−
65
130
−
16
32
−
19
38
−
8
16
ns
−
15
30
−
30
60
−
23
46
−
11.5
16
nC
−
1.5
−
−
3.5
−
−
2.8
−
Vdc
−
0.82
1.2
−
0.7
−
−
24
−
ns
−
17
−
−
7
−
−
0.025
−
μC
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