2N6053(2012) 데이터 시트보기 (PDF) - Comset Semiconductors
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2N6053 Datasheet PDF : 3 Pages
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PNP 2N6053
POWER COMPLEMENTARY SILICON TRANSISTORS
The 2N6053 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted
in Jedec TO-3 metal case.
They are inteded for use in power linear and low frequency switching applications.
The complementary NPN types are 2N6055.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCBO
VCEO
VEBO
IC
ICM
IB
PT
TJ
Ts
Collector-Base Voltage
Collector-EmitterVoltage
Emitter-Base Voltage
Collector Current
Collector Peak Current
Base Current
Power Dissipation
Junction
Storage Temperature
IE=0
IB=0
IC=0
@ TC < 25°
Value
2N6053
2N6053
-60
-60
-5.0
-8
-16
-120
100
200
-65 to +200
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-C
Thermal Resistance, Junction to Case
Value
1.17
Unit
V
V
V
A
A
mA
W
°C
Unit
°C/W
17/10/2012
COMSET SEMICONDUCTORS
1|3
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