MJ4030 데이터 시트보기 (PDF) - Comset Semiconductors

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MJ4030

MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS

Comset Semiconductors 

PNP MJ4030 – MJ4031 – MJ4032

MEDIUM POWER COMPLEMENTARY SILICON

TRANSISTORS

They are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration

and are mounted in Jedec TO-3 metal case.

They are intented for use as output devices in complementary general purpose amplifier

applications.

The complementary NPN types are the MJ4033, MJ4034, MJ4035

Compliance to RoHS

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

VCBO

Collector-Base Voltage

IE=0

VCEO

Collector-EmitterVoltage

IB=0

VEBO

IC

IB

PT

TJ

Ts

Emitter-Base Voltage

Collector Current

Base Current

Power Dissipation

Junction Temperature

Storage Temperature

IC=0

@ TC < 25°

THERMAL CHARACTERISTICS

Symbol

Ratings

RthJ-C

Thermal Resistance, Junction to Case

Value

MJ4030

MJ4031

MJ4032

MJ4030

MJ4031

MJ4032

MJ4030

MJ4031

MJ4032

-60

-80

-100

-60

-80

-100

-5.0

-16

-0.5

150

200

-65 to +200

Unit

V

V

V

A

A

W

°C

Value

1.17

Unit

°C/W

29/10/2012

COMSET SEMICONDUCTORS

1|3

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