DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

SD101CWS(2010) 데이터 시트보기 (PDF) - Diodes Incorporated.

부품명
상세내역
제조사
SD101CWS
(Rev.:2010)
Diodes
Diodes Incorporated. Diodes
SD101CWS Datasheet PDF : 4 Pages
1 2 3 4
SD101AWS – SD101CWS
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 4)
Forward Voltage Drop
Peak Reverse Current (Note 4)
Total Capacitance
Reverse Recovery Time
Symbol Min Typ Max Unit Test Conditions
SD101AWS
60
IR = 10μA
SD101BWS
V(BR)R
50
V IR = 10μA
SD101CWS
40
IR = 10μA
SD101AWS
SD101BWS
SD101CWS
SD101AWS
VFM
SD101BWS
SD101CWS
0.41
IF = 1.0mA
0.40
IF = 1.0mA
0.39
1.00
V IF = 1.0mA
IF = 15mA
0.95
IF = 15mA
0.90
IF = 15mA
SD101AWS
VR = 50V
SD101BWS
IRM
200
μA VR = 40V
SD101CWS
VR = 30V
SD101AWS
2.0
SD101BWS
CT
2.1
pF VR = 0V, f = 1.0MHz
SD101CWS
2.2
trr
1.0
ns
IF = IR = 5.0mA,
Irr = 0.1 x IR, RL = 100Ω
Notes: 4. Short duration pulse test used to minimize self-heating effect.
100
10
TA = 125ºC
TA = 75ºC
TA = 25ºC
10,000
1,000
100
10
1.0
TA = 0ºC
0.1
0
TA = -40ºC
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Typical Forward Characteristics
1.8
1
0.1
0
10
20
30
40
50
60
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 2 Typical Reverse Characteristics
250
1.6
f = 1.0MHz
1.4
200
1.2
150
1.0
0.8
100
0.6
0.4
50
0.2
0
0
0 5 10 15 20 25 30 35 40
0
VR, DC REVERSE VOLTAGE (V)
Fig. 3 Total Capacitance vs. Reverse Voltage
SD101AWS – SD101CWS
Document number: DS30078 Rev. 11 - 2
2 of 4
www.diodes.com
40
80
120
160
200
TA, AMBIENT TEMPERATURE (°C)
Fig. 4 Power Derating Curve
March 2010
© Diodes Incorporated

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]