MPS6726G 데이터 시트보기 (PDF) - ON Semiconductor
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MPS6726G Datasheet PDF : 4 Pages
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MPS6726
One Watt Amplifier
Transistors
PNP Silicon
Features
• This is a Pb−Free Device*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
−30
−40
−5.0
−1.0
1.0
8.0
Vdc
Vdc
Vdc
Adc
W
mW/°C
Total Device Dissipation @ TC = 25°C
PD
2.5
W
Derate above 25°C
20
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
125
°C/W
Thermal Resistance, Junction−to−Case
RqJC
50
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
123
STRAIGHT LEAD
BULK PACK
TO−92 1 WATT
1
2
3
(TO−226)
CASE 29−10
STYLE 1
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
MPS
6726
AYWW G
G
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
1
August, 2010 − Rev. 4
ORDERING INFORMATION
Device
MPS6726G
Package
TO−92
(Pb−Free)
Shipping†
5000 Units / Bulk
Publication Order Number:
MPS6726/D
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