MPSA113(RevA) 데이터 시트보기 (PDF) - Unisonic Technologies

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MPSA113
(Rev.:RevA)

NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR

Unisonic Technologies 

UTC MPSA113 NPN EPITAXIAL SILICON TRANSISTOR

DARLINGTON TRANSISTOR

DESCRIPTION

The UTC MPSA113 is a Darlington transistor.

1

FEATURES

*Collector-Emitter Voltage: VCES = 30V

*Collector Dissipation: Pc (mas) = 625 mW

SOT-89

1: EMITTER 2: COLLECTOR 3: BASE

ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified.)

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

30

V

Collector-Emitter Voltage

VCES

30

V

Emitter-Base Voltage

VEBO

10

V

Collector Dissipation(Tc=25°C)

Pc

625

mW

Collector Current

Ic

500

mA

Junction Temperature

Tj

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

Collector-Emitter Breakdown Voltage

BVCES

Ic=100µA,IB=0

Collector Cut-Off Current

ICBO

VCB=30V,IE=0

Emitter Cut-Off Current

IEBO

VEB=10V,Ic=0

DC Current Gain

hFE

VCE=5V,Ic=100mA

Collector-Emitter Saturation Voltage

VCE(sat)

Ic=100mA,IB=0.1mA

Base-Emitter on Voltage

VBE(on)

VCE=5V,Ic=100mA

Current Gain Bandwidth Product

fT

VCE=5V,Ic=10mA,

f=100MHz

Pulse test: Pulse Width<300µs, Duty Cycle=2%

MIN MAX

30

100

100

30000

1.5

2.0

125

UNIT

V

nA

nA

V

V

MHz

UTC UNISONIC TECHNOLOGIES CO., LTD. 1

QW-R208-009,A

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