MRF1035 데이터 시트보기 (PDF) - Motorola => Freescale

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MRF1035

Microwave Pulse Power Transistor

Motorola => Freescale 

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic

Symbol

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0)

V(BR)CES

Collector–Base Breakdown Voltage (IC = 60 mAdc, IE = 0)

Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)

V(BR)CBO

V(BR)EBO

Collector Cutoff Current (VCB = 36 Vdc, IE = 0)

ICBO

ON CHARACTERISTICS

DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc)

hFE

FUNCTIONAL TESTS

Common–Base Amplifier Power Gain

(VCC = 50 Vdc, Pout = 350 W Peak, f = 1090 MHz)

GPB

Collector Efficiency

η

(VCC = 50 Vdc, Pout = 350 W Peak, f = 1090 MHz)

Load Mismatch

ψ

(VCC = 50 Vdc, Pout = 350 W Peak, f = 1090 MHz,

VSWR = 10:1 All Phase Angles)

Min

Typ

Max

Unit

65

—

—

Vdc

65

—

—

Vdc

3.5

—

—

Vdc

—

—

25

mAdc

20

—

—

—

8.5

9.0

—

dB

40

—

—

%

No Degradation in Output Power

RF INPUT

Z5

Z1 Z2 Z3 Z4

C2

C3

L1

D.U.T.

Z6 Z7 Z8 Z9

+

C4

C1

+

–

RF OUTPUT

C1 — 75 pF 100 Mil Chip Capacitor

C2 — 39 pF 100 Mil Chip Capacitor

C3 — 0.1 µF

C4 — 100 µF, 100 Vdc, Electrolytic

L1 — 3 Turns #18 AWG, 1/8″ ID, 0.18 Long

Z1–Z9 — Microstrip, See Details

Board Material — Teflon, Glass Laminate

Dielectric Thickness = 0.030″

εr = 2.55, 2 Oz. Copper

.094

.589

.573

.170

.083

.616

.838

.130

.395

.402

1.518 .571

.278

.394

.258 .170

.364

.594 1.685

.095

Figure 1. Test Circuit

.156

.159

.382 .083

.396

.100

.803

.160

MRF10350

2

MOTOROLA RF DEVICE DATA

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