MRF372 데이터 시트보기 (PDF) - Motorola => Freescale

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MRF372

470 – 860 MHz, 180 W, 32 V LATERAL N–CHANNEL RF POWER MOSFET

Motorola => Freescale 

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS (1)

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID =10 µA)

V(BR)DSS

68

—

—

Vdc

Zero Gate Voltage Drain Current

(VDS = 32 Vdc, VGS = 0 Vdc)

IDSS

—

—

10

µAdc

Gate–Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IGSS

—

—

1

µAdc

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = 10 V, ID = 200 µA)

VGS(th)

2

3

4

Vdc

Gate Quiescent Voltage

(VDS = 32 V, ID = 100 mA)

VGS(Q)

2.5

3.5

4.5

Vdc

Drain–Source On–Voltage

(VGS = 10 V, ID = 3 A)

VDS(on)

—

0.28

0.45

Vdc

Forward Transconductance

(VDS = 10 V, ID = 3 A)

gfs

—

2.6

—

S

DYNAMIC CHARACTERISTICS (1)

Input Capacitance (Includes Input Matching Capacitance)

(VDS = 32 V, VGS = 0 V, f = 1 MHz)

Ciss

—

260

—

pF

Output Capacitance

(VDS = 32 V, VGS = 0 V, f = 1 MHz)

Coss

—

69

—

pF

Reverse Transfer Capacitance

(VDS = 32 V, VGS = 0 V, f = 1 MHz)

Crss

—

2.5

—

pF

FUNCTIONAL CHARACTERISTICS, NARROWBAND OPERATION (In Motorola MRF372 Narrowband Circuit, 50 ohm system) (2)

Common Source Power Gain

(VDD = 32 V, Pout = 180 W PEP, IDQ = 2 x 400 mA,

f1 = 857 MHz, f2 = 863 MHz)

Gps

16

17

—

dB

Drain Efficiency

(VDD = 32 V, Pout = 180 W PEP, IDQ = 2 x 400 mA,

f1 = 857 MHz, f2 = 863 MHz)

η

33

36

—

%

Intermodulation Distortion

(VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 2 x 400 mA,

f1 = 857 MHz, f2 = 863 MHz)

IMD

—

–35

–31

dBc

Output Mismatch Stress

ψ

(VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 2 x 400 mA,

f1 = 857 MHz, f2 = 863 MHz, VSWR = 3:1 at all phase angles

of test)

No Degradation in Output Power

TYPICAL CHARACTERISTICS, BROADBAND OPERATION (In Motorola MRF372 Broadband Circuit, 50 ohm system) (2)

Common Source Power Gain

(VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 2 x 500 mA,

f1 = 857 MHz, f2 = 863 MHz)

Gps

—

14.5

—

dB

Drain Efficiency

(VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 2 x 500 mA,

f1 = 857 MHz, f2 = 863 MHz)

η

—

37

—

%

Intermodulation Distortion

(VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 2 x 500 mA,

f1 = 857 MHz, f2 = 863 MHz)

IMD

—

–31

—

dBc

(1) Each side of device measured separately.

(2) Measured in push–pull configuration.

MRF372

2

MOTOROLA RF DEVICE DATA

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