MRF5S21130 데이터 시트보기 (PDF) - Motorola => Freescale
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MRF5S21130
Motorola => Freescale
MRF5S21130 Datasheet PDF : 12 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF5S21130/D
The RF MOSFET Line
MRF5S21130
RF Power Field Effect Transistors MRF5S21130R3
N–Channel Enhancement–Mode Lateral MOSFETs MRF5S21130S
Designed for W–CDMA base station applications at frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L
applications.
MRF5S21130SR3
• Typical 2–carrier W–CDMA Performance for VDD = 28 Volts,
IDQ = 1200 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth =
3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 –5 MHz
and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW
@ f1 –10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability
on CCDF.
Output Power — 28 Watts Avg.
Power Gain — 13.5 dB
Efficiency — 26%
IM3 — –37 dBc
ACPR — –39 dBc
2170 MHz, 28 W AVG.,
2 x W–CDMA, 28 V
LATERAL N–CHANNEL
RF POWER MOSFETs
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 92 Watts CW
Output Power
CASE 465B–03, STYLE 1
NI–880
MRF5S21130
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Qualified Up to a Maximum of 32 VDD Operation
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
CASE 465C–02, STYLE 1
NI–880S
MRF5S21130S
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
CW Operation
Symbol
VDSS
VGS
PD
Tstg
TJ
CW
Value
65
–0.5, +15
315
2
–65 to +150
200
92
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Watts
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 0
MMoOtoTroOla,RInOc.L2A00R2 F DEVICE DATA
MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3
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