ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
IDSS
—
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 µAdc)
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 450 mAdc)
VGS(th)
2
VGS(Q)
—
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 1.3 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 4 Adc)
VDS(on)
—
gfs
—
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss
—
Coss
—
Crss
—
Typ
—
—
—
2.9
3.7
0.17
5.3
98
50
2
Max
Unit
10
µAdc
1
µAdc
1
µAdc
4
Vdc
—
Vdc
0.4
Vdc
—
S
—
pF
—
pF
—
pF
(continued)
MRF9060R1 MRF9060SR1
2
MOTOROLA RF DEVICE DATA