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MRF9002R2 Datasheet PDF : 12 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF9002R2/D
The RF Sub–Micron MOSFET Line
RF Power Field Effect
Transistor Array
N–Channel Enhancement–Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies to 1.0 GHz. The high gain and broadband performance of this device make
it ideal for large–signal, common–source amplifier applications in 26 volt base
station equipment.
• Typical Performance at 960 MHz, 26 Volts
Output Power — 2 Watts Per Transistor
Power Gain — 18 dB
Efficiency — 50%
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal
Impedance Parameters
• Available in Tape and Reel. R2 Suffix = 1,500 Units
per 16 mm, 13 inch Reel.
MRF9002R2
1.0 GHz, 2 W, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 978–03
PLASTIC
PFP–16
PIN CONNECTIONS
N.C. 1
N.C. 2
GATE1 3
N.C. 4
GATE2 5
N.C. 6
GATE3 7
N.C. 8
16 DRAIN 1-1
15 DRAIN 1-2
14 DRAIN 2-1
13 DRAIN 2-2
12 N.C.
11 DRAIN 3-1
10 DRAIN 3-2
9 N.C.
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Dissipation Per Transistor @ TC = 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case, Single Transistor
MOISTURE SENSITIVITY LEVEL
Test Methodology
Per JESD 22–A113
(Top View)
NOTE: Exposed backside flag is source
terminal for transistors.
Symbol
VDSS
VGS
PD
Tstg
TJ
Value
65
–0.5, +15
4
–65 to +150
150
Unit
Vdc
Vdc
Watts
°C
°C
Symbol
RθJC
Max
12
Unit
°C/W
Rating
3
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 3
MMoOtoTroOla,RInOc.L2A00R2 F DEVICE DATA
MRF9002R2
1
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