MRF9180 데이터 시트보기 (PDF) - Motorola => Freescale

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MRF9180

880 MHz, 170 W, 26 V LATERAL N–CHANNEL RF POWER MOSFETs

Motorola => Freescale 

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS (1)

Zero Gate Voltage Drain Leakage Current

(VDS = 65 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 26 Vdc, VGS = 0 Vdc)

Gate–Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 300 µAdc)

Gate Quiescent Voltage

(VDS = 26 Vdc, ID = 700 mAdc)

Drain–Source On–Voltage

(VGS = 10 Vdc, ID = 2 Adc)

Forward Transconductance

(VDS = 10 Vdc, ID = 6 Adc)

DYNAMIC CHARACTERISTICS (1)

Output Capacitance

(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Reverse Transfer Capacitance

(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2)

Two–Tone Common–Source Amplifier Power Gain

(VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 700 mA,

f1 = 880.0 MHz, f2 = 880.1 MHz)

IDSS

—

IDSS

—

IGSS

—

VGS(th)

2

VGS(Q)

—

VDS(on)

—

gfs

—

Coss

—

Crss

—

Gps

16

Two–Tone Drain Efficiency

(VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2

f1 = 880.0 MHz, f2 = 880.1 MHz)

700 mA,

η

35

3rd Order Intermodulation Distortion

(VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2

f1 = 880.0 MHz, f2 = 880.1 MHz)

700 mA,

IMD

—

Input Return Loss

(VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2

f1 = 880.0 MHz, f2 = 880.1 MHz)

700 mA,

IRL

—

Two–Tone Common–Source Amplifier Power Gain

(VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 700 mA,

f1 = 865.0 MHz, f2 = 865.1 MHz)

Gps

—

Two–Tone Drain Efficiency

(VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2

f1 = 865.0 MHz, f2 = 865.1 MHz)

700 mA,

η

—

3rd Order Intermodulation Distortion

(VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2

f1 = 865.0 MHz, f2 = 865.1 MHz)

700 mA,

IMD

—

Input Return Loss

(VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2

f1 = 865.0 MHz, f2 = 865.1 MHz)

700 mA,

IRL

—

Power Output, 1 dB Compression Point

(VDD = 26 Vdc, CW, IDQ = 2 700 mA,

f1 = 880.0 MHz)

(1) Each side of device measured separately.

(2) Device measured in push–pull configuration.

P1dB

—

Typ

—

—

—

2.9

3.7

0.19

6

77

3.8

17.5

39

–31

–15

17.5

38.5

–31

–13

170

Max

Unit

10

µAdc

1

µAdc

1

µAdc

4

Vdc

—

Vdc

0.5

Vdc

—

S

—

pF

—

pF

—

dB

—

%

–28

dBc

–9

dB

—

dB

—

%

—

dBc

—

dB

—

W

MRF9180 MRF9180S

2

MOTOROLA RF DEVICE DATA

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