CRF-22010-001 데이터 시트보기 (PDF) - Cree, Inc

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CRF-22010-001

10 W SiC RF Power MESFET

Cree, Inc 

CRF-22010-001

CRF-22010-101

Typical Broadband Performance (TC = 25°C, VDS = 48 V, IDQ = 500 mA)

CR22010 Single-Ended Broadband Amp; Untuned Prototype

16

14

12

10

8

6

4

2

0

1.7

16

14

12

10

8

6

4

2

1.7

Gain

P1dB

W-CDMA

3GPP Test Model 1

with 16 DPCH

1.8

1.9

2.0

2.1

2.2

Frequency (GHz)

CR22010 Balanced Broadband Amp

Vds=48V, Idq=500mA/Device; Untuned Prototype

Gain

P1dBm

W-CDMA

3GPP Test Model 1

with 16 DPCH

1.8

1.9

2.0

2.1

2.2

2.3

Frequency (GHz)

41

39

37

35

33

31

29

27

25

2.3

44

42

40

38

36

34

32

30

2.4

Specifications subject to change without notice© Cree, Inc. 2003

http://www.cree.com/3

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