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MS1001 데이터 시트보기 (PDF) - Advanced Power Technology
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MS1001
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Advanced Power Technology
MS1001 Datasheet PDF : 3 Pages
1
2
3
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS1001
ELECTRICAL SPECIFICATIONS (Tcase = 25
°
C)
STATIC
Symbol
Test Conditions
BV
CBO
BV
CES
BV
CEO
BV
EBO
I
CES
h
FE
I
C
= 50 mA
I
C
= 100 mA
I
C
= 100 mA
I
E
= 10 mA
V
CE
= 15 V
V
CE
= 5 V
I
E
= 0 mA
V
BE
= 0 V
I
B
= 0 mA
I
C
= 0 mA
I
E
= 0 mA
I
C
= 5 A
Min.
36
36
18
4.0
---
20
Value
Typ.
---
---
---
---
---
---
Max.
---
---
---
---
15
200
Unit
V
V
V
V
mA
---
DYNAMIC
Symbol
Test Conditions
P
OUT
G
P
IMD*
C
OB
Condition
s
f = 30MHz
P
IN
= 3.8 W
f = 30MHz
P
IN
= 3.8 W
f = 30MHz
V
CC
=12.5V
f = 1 MHz
V
CB
=12V
f1 = 30.000 MHz f2 = 30.001 MHz
V
CE
=12.5V
V
CE
=12.5V
I
CQ
= 100mA
Min.
75
13
-32
---
Value
Typ.
---
---
---
350
Max.
---
---
---
---
Unit
WPEP
dB
dB
C
pf
IMPEDANCE DATA
FREQ
Z
IN
(
Ω )
30 MHz 0.7 + j0.75
P
IN
= 3.8W
V
CC
=12.5V
Z
CL
(
Ω )
1.2 + j1.0
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
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