DS2506 데이터 시트보기 (PDF) - Dallas Semiconductor -> Maxim Integrated

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DS2506

64-kbit Add-Only Memory

Dallas Semiconductor -> Maxim Integrated 

HIERARCHICAL STRUCTURE FOR 1-WIRE PROTOCOL Figure 2

DS2506

64-BIT LASERED ROM Figure 3

8-Bit CRC Code

48-Bit Serial Number

8-Bit Family Code (0FH)

MSB

LSB MSB

LSB MSB

LSB

65536-BITS EPROM

The memory map in Figure 4 shows the 65536-bit EPROM section of the DS2506 which is configured as

256 pages of 32 bytes each. The 8-bit scratchpad is an additional register that acts as a buffer when

programming the memory. Data is first written to the scratchpad and then verified by reading an 16-bit

CRC from the DS2506 that confirms proper receipt of the data and address. If the buffer contents are

correct, a programming voltage should be applied and the byte of data will be written into the selected

address in memory. This process insures data integrity when programming the memory. The details for

reading and programming the 65536-bit EPROM portion of the DS2506 are given in the Memory

Function Commands section.

EPROM STATUS BYTES

In addition to the 65536 bits of data memory the DS2506 provides 2816 bits of Status Memory accessible

with separate commands.

The EPROM Status Bytes can be read or programmed to indicate various conditions to the software

interrogating the DS2506. The first 32 bytes of the EPROM Status Memory (addresses 000 to 01FH)

contain the Write Protect Page bits which inhibit programming of the corresponding page in the 65536-bit

main memory area if the appropriate write protection bit is programmed. Once a bit has been

programmed in the Write Protect Page section of the Status Memory, the entire 32 byte page that

corresponds to that bit can no longer be altered but may still be read.

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