MSG36E41 데이터 시트보기 (PDF) - Panasonic Corporation

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MSG36E41

SiGe HBT type For low-noise RF amplifier

Panasonic Corporation 

MSG36E41

■ Electrical Characteristics (continued) Ta = 25°C ± 3°C

• Tr2

Parameter

Symbol

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

Transition frequency *

Forward transfer gain *

Noise figure *

ICBO

ICEO

IEBO

hFE

fT

S21e2

NF

Collector output capacitance

Cob

(Common base, input open circuited) *

Conditions

VCB = 9 V, IE = 0

VCE = 6 V, IB = 0

VEB = 1 V, IC = 0

VCE = 3 V, IC = 3 mA

VCE = 3 V, IC = 10 mA, f = 2 GHz

VCE = 3 V, IC = 10 mA, f = 2 GHz

VCE = 3 V, IC = 3 mA, f = 2 GHz

VCB = 3 V, IE = 0, f = 1 MHz

Min Typ Max Unit

1

µA

1

µA

1

µA

100

220



19

GHz

9.0 11.0

dB

1.4 2.0

dB

0.3 0.6

pF

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. Observe precautions for handling. Electrostatic sensitive devices.

3. *: Verified by random sampling

Common characteristics chart

PC  Ta

120

100

80

60

40

20

0

0

40

80

120

Ambient temperature Ta (°C)

2

SJC00319BED

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