¡ Semiconductor
FEDL9000B-01
MSM9000B-xx
ELECTRICAL CHARACTERISTICS
DC Characteristics (1)
Parameter
Input high voltage 1
Input high voltage 2
Input low voltage 1
Input low voltage 2
Input high current 1
Symbol
VIH1
VIH2
VIL1
VIL2
IIH1
Condition
—
—
—
—
VI=VDD
Input high current 2 IIH2
VI=VDD
Input low current 1
IIL1
VI=0 V
Off leakage current
Ioff
VI=VDD/0 V
Output high voltage 1 VOH1
IO=–500 mA
Output low voltage 1 VOL1
IO=500 mA
COM output resistance RC
SEG output resistance RS
Drain current 1
IDD1
Drain current 2
IDD2
IO=±50 mA
IO=±20 mA
During operation *1
Crystal oscillation
f = 32.768 kHz
During operation *1
External clock
f = 32 kHz
(VDD = 2.5 to 3.3 V, VBI = 3 to 5.5 V, Ta = –30 to +85°C)
Min. Typ. Max. Unit Applicable pin
VDD–0.25 —
VDD
0.8VDD —
VDD
0
— 0.55
V XT
V Other inputs
V XT
0
— 0.2VDD V Other input pins
—
—
1
mA Input pins other
than XT and TEST
10
—
60
mA TEST (pull-down
resistor)
–1
—
—
mA Input pins other
than XT and TEST
–1
—
1
mA SO and DB0 to
DB7
0.9VDD —
—
V SO and DB0 to
DB7
—
— 0.1VDD V SO and DB0 to
DB7
—
—
10
kW COM1 to COM16
—
—
30
kW SEG1 to SEG60
—
15
35
mA VDD
—
15
35
mA VDD
Drain current 3
IDD3
During standby
—
—
7
mA VDD
*1 No output load
Note : The values in this table are assured when the chip is not exposed to light.
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