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M95160-RMN1 데이터 시트보기 (PDF) - STMicroelectronics

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M95160-RMN1 Datasheet PDF : 19 Pages
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M95640, M95320, M95160, M95080
Figure 10. Byte Write Operation Sequence
S
0 1 2 3 4 5 6 7 8 9 10 20 21 22 23 24 25 26 27 28 29 30 31
C
INSTRUCTION
16 BIT ADDRESS
DATA BYTE
D
15 14 13 3 2 1 0 7 6 5 4 3 2 1 0
HIGH IMPEDANCE
Q
Note: 1. Depending on the memory size, as shown in Table 7, the most significant address bits are Don’t Care.
AI01795
data byte has been latched in, as shown in Figure
10, otherwise the write process is cancelled. As
soon as the memory device is deselected, the self-
timed internal write cycle is initiated. While the
write is in progress, the status register may be
read to check the status of the SRWD, BP1, BP0,
WEL and WIP bits. In particular, WIP contains a ‘1’
during the self-timed write cycle, and a ‘0’ when
the cycle is complete, (at which point the write en-
able latch is also reset).
Page Write Operation
A maximum of 32 bytes of data can be written dur-
ing one Write time, tW, provided that they are all to
Figure 11. Page Write Operation Sequence
S
0 1 2 3 4 5 6 7 8 9 10 20 21 22 23 24 25 26 27 28 29 30 31
C
INSTRUCTION
16 BIT ADDRESS
DATA BYTE 1
D
15 14 13 3 2 1 0 7 6 5 4 3 2 1 0
S
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
C
DATA BYTE 2
DATA BYTE 3
DATA BYTE N
D
7654321076543210
6543210
Note: 1. Depending on the memory size, as shown in Table 7, the most significant address bits are Don’t Care.
AI01796
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