MSS50-1200(1995) 데이터 시트보기 (PDF) - STMicroelectronics
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MSS50-1200 Datasheet PDF : 6 Pages
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....FEATURES
VDRM = VRRM UP TO 1400 V
IT(RMS) = 70 A
HIGH SURGE CAPABILITY
INSULATED PACKAGE :
INSULATING VOLTAGE 2500 V(RMS)
D E S CRI P T IO N
The MSS50 family are constitued of two general
purpose SCR. Suitable for AC switching and
phase control on resistive and inductive load up
to 400 Hz.
The small volume (7cm3) and weight (29g) of the
isotop package are well adapted to new genera-
tion of medium size module market applications.
PIN CONNECTIONS
1 : Thyristor 2 Anode (A2)
2 : Thyristor 2 Gate (G2)
3 : Thyristor 1 Anode (A1)
4 : Thyristor 1 Gate (G1)
MSS50
THYRISTOR MODULE
G1
A2
A1
G2
Screw version
ISO TOPTM
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
IT(RMS)
ITSM
RMS on-state current
Non repetitive surge peak on-state current
( Tj initial = 25°C )
I2t
dI/dt
Tstg
Tj
I2t value for fusing
Critical rate of rise of on-state current
Gate supply : IG = 800mA – diG/dt = 1A/µs
Storage temperature range
Operating junction temperature range
Tc = 80°C
tp = 8.3ms
tp = 10ms
tp = 10ms
Value
70
630
600
1800
100
- 40 + 150
- 40 + 125
Unit
A
A
A2s
A/µs
°C
Symbol
Parameter
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125 °C
TM : ISOTOP is a trademark of SGS-THOMSON Microelectronics
April 1995
-800
800
MSS50
-1200
1200
Unit
-1400
1400
V
1/6
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